RU3030M2 n-channel advanced power mosfet symbol rating unit v dss 30 v gss 20 t j 150 c t stg -55 to 150 c i s t c =25c 30 a i dp t c =25c 120 a t c =25c 30 t c =100c 19 t a =25c 10.8 t a =70c 8.7 t c =25c 29 t c =100c 12 t a =25c 3.5 t a =70c 2.3 ruichips semiconductor co., ltd rev. a? apr., 2013 1 www.ruichips.com continuous drain current@t a (v gs =10v) maximum power dissipation@t c maximum power dissipation@t a maximum junction temperature storage temperature range diode continuous forward current 300s pulse drain current tested mounted on large heat sink i d a p d w continuous drain current@t c (v gs =10v) parameter common ratings (t c =25c unless otherwise noted) ? 30v/30a, r ds (on) =10m(typ.)@v gs =10v r ds (on) =15m(typ.)@v gs =4.5v ? super high dense cell design ? fast switching speed ? low gate charge ? 100% avalanche tested ? lead free and green devices available (rohs compliant) ? switching application systems drain-source voltage v gate-source voltage pin description features applications absolute maximum ratings pdfn3333 n-channel mosfet s s s g d d d d pin1 pin1 d s g
RU3030M2 symbol rating unit r jc 4.2 c/w r ja 35 c/w e as 42 mj min. typ. max. bv dss drain-source breakdown voltage 30 v 1 t j =125c 30 v gs(th) gate threshold voltage 1.2 2.5 v i gss gate leakage current 100 na 10 15 p
15 25 p
v sd diode forward voltage 1.2 v t rr reverse recovery time 15 ns q rr reverse recovery charge 8 nc r g gate resistance 1
c iss input capacitance 670 c oss output capacitance 180 c rss reverse transfer capacitance 75 t d(on) turn-on delay time 5 t r turn-on rise time 10 t d(off) turn-off delay time 15 t f turn-off fall time 4 q g total gate charge 12 q gs gate-source charge 3 q gd gate-drain charge 4 ruichips semiconductor co., ltd rev. a? apr., 2013 2 www.ruichips.com v gs =0v, i ds =250a electrical characteristics (t c =25c unless otherwise noted) r ds(on) drain-source on-state resistance v gs =10v, i ds =20a v ds =v gs , i ds =250a static characteristics symbol parameter test condition RU3030M2 unit i dss zero gate voltage drain current v ds =30v, v gs =0v a parameter thermal resistance-junction to case thermal resistance-junction to ambient avalanche energy, single pulsed drain-source avalanche ratings v gs =0v,v ds =0v,f=1mhz dynamic characteristics v gs =20v, v ds =0v v gs =4.5v, i ds =16a diode characteristics i sd =20a, v gs =0v i sd =20a, dl sd /dt=100a/s v ds =24v, v gs =10v, i ds =20a gate charge characteristics nc ns v gs =0v, v ds =15v, frequency=1.0mhz pf v dd =15v, r l
i ds =20a, v gen =10v, r g
RU3030M2 notes: device marking package packaging quantity reel size tape width RU3030M2 3030 pdfn3333 tape&reel 5000 13'' 12mm ruichips semiconductor co., ltd rev. a? apr., 2013 3 www.ruichips.com ordering and marking information pulse width limited by safe operating area. calculated continuous current based on maximum allowable junction temperature. when mounted on 1 inch square copper board, t 10sec. limited by t jmax , i as =13a, v dd = 24v, r g = 50, starting t j = 25c. pulse test;pulse width 300s, duty cycle 2%. guaranteed by design, not subject to production testing.
RU3030M2 ruichips semiconductor co., ltd rev. a? apr., 2013 4 www.ruichips.com typical characteristics 0 5 10 15 20 25 30 35 25 50 75 100 125 150 175 i d - drain current (a) t j - junction temperature ( c) drain current vgs=10v 0 20 40 60 80 100 0 1 2 3 4 5 6 7 8 9 10 r ds(on) - on - resistance (m ) v gs - gate - source voltage (v) drain current ids=20a 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 175 p d - power (w) t j - junction temperature ( c) power dissipation 0.01 0.1 1 10 100 0.01 0.1 1 10 100 i d - drain current (a) v ds - drain - source voltage (v) safe operation area 10 s 100 s 1ms 10ms dc r ds(on) limited t c =25 c 0.01 0.1 1 10 1e -05 0.0001 0.001 0.01 0.1 1 zthjc - thermal response ( c/w) square wave pulse duration (sec) thermal transient impedance single pulse duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse r jc = 4.2 c/w
RU3030M2 ruichips semiconductor co., ltd rev. a? apr., 2013 5 www.ruichips.com typical characteristics 0 30 60 90 120 150 0 1 2 3 4 5 i d - drain current (a) v ds - drain - source voltage (v) output characteristics 2v 3v 5v 6v 10v 0 10 20 30 40 50 0 10 20 30 40 50 60 r ds(on) - on resistance (m) i d - drain current (a) drain - source on resistance 10v 4.5v 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 normalized on resistance t j - junction temperature ( c) drain - source on resistance v gs =10v i d =20a t j =25 c rds(on)=10m 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 1.4 i s - source current (a) v sd - source - drain voltage (v) source - drain diode forward t j =25 c t j =150 c 0 200 400 600 800 1000 1 10 100 c - capacitance (pf) v ds - drain - source voltage (v) capacitance ciss coss crss frequency=1.0mhz 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v gs - gate - source voltage (v) q g - gate charge (nc) gate charge vds=24v ids=20a
RU3030M2 ruichips semiconductor co., ltd rev. a? apr., 2013 6 www.ruichips.com avalanche test circuit and waveforms switching time test circuit and waveforms
RU3030M2 ruichips semiconductor co., ltd rev. a? apr., 2013 7 www.ruichips.com package information pdfn3333 0.4 0.65 0.72 1.98 0.25 0.60 3.55 2.80 ( only for reference ) land pattern d1 d d3 l1 e m c a e1 e b l h e2 d2 min nom max min nom max min nom max min nom max a 0.70 0.75 0.80 0.028 0.030 0.031 e1 3.00 3.15 3.20 0.118 0.122 0.126 b 0.25 0.30 0.35 0.010 0.012 0.014 e2 2.39 2.49 2.59 0.094 0.098 0.102 c 0.10 0.15 0.25 0.004 0.007 0.010 e d 3.25 3.35 3.45 0.128 0.132 0.136 h 0.30 0.40 0.50 0.012 0.016 0.020 d1 3.00 3.10 3.20 0.118 0.122 0.126 l 0.30 0.40 0.50 0.012 0.016 0.020 d2 1.78 1.88 1.98 0.070 0.074 0.078 l1 * 0.13 * * 0.005 * d3 * 0.13 * * 0.005 * * 10 12 * 10 12 e 3.20 3.30 3.40 0.126 0.130 0.134 m * * 0.15 * * 0.006 symbol mm inch 0.65bsc 0.026bsc symbol mm inch
RU3030M2 ruichips semiconductor co., ltd rev. a? apr., 2013 8 www.ruichips.com customer service worldwide sales and service: sales@ruichips.com technical support: technical@ruichips.com investor relations contacts: investor@ruichips.com marcom contact: marcom@ruichips.com editorial contact: editorial@ruichips.comm hr contact: hr@ruichips.com legal contact: legal@ruichips.com shen zhen ruichips semiconductor co., ltd room 501, the 5floor an tong industrial building, no.207 mei hua road fu tian area shen zhen city, china tel: (86 - 755) 8311 - 5334 fax: (86 - 755) 8311 - 4278 e - mail: sales - sz@ruichips.com
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